|
Depot Institutionnel de l'UMBB >
Browsing by Author Djezzar, B.
Showing results 1 to 7 of 7
| Date de publication | Titre | Auteur(s) | | 2011 | Fast and simple method for estimation and separation of radiation-induced traps in MOSFETs devices | Nadji, B.; Tahi, H.; Djezzar, B. |
| 2011 | Geometric component in constant-amplitude charge-pumping characteristics of LOCOS- and LDD-MOSFET devices | Tahi, H.; Djezzar, B.; Benabdelmoumen, A.; Nadji, B. |
| 2021 | Hot carrier degradation in Triple-RESURF LDMOS with Trenched-Gate | Houadef, Ali; Djezzar, B. |
| 2010 | Modeling and simulation of charge-pumping characteristics for LDD-MOSFET devices with LOCOS isolation | Tahi, H.; Djezzar, B.; Nadji, B. |
| 2010 | Radiation effect evaluation in effective short and narrow channels of LDD transistor with LOCOS isolation using OTCP method | Tahi, H.; Djezzar, B.; Nadji, B. |
| 2010 | Using oxide-trap charge-pumping method in radiation-reliability analysis of short lightly doped drain transistor | Djezzar, B.; Tahi, H. |
| 2009 | Why is oxide-trap charge-pumping method appropriate for radiation-induced trap depiction in MOSFET? | Djezzar, B.; Tahi, H.; Mokrani, A. |
Showing results 1 to 7 of 7
|
