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Depot Institutionnel de l'UMBB >
Browsing by Author Djezzar, Boualem
Showing results 1 to 19 of 19
| Date de publication | Titre | Auteur(s) | | 2014 | An accurate combination of on-the-fly interface trap and threshold voltage methods for NBTI degradation extraction | Tahanout, Cherifa; Tahi, Hakim; Djezzar, Boualem; Benabdelmomene, Abdelmadjid; Goudjil, Mohamed; Nadji, Becharia |
| 2015 | Deep Analysis of the Geometric Component in Charge Pumping of Polycrystalline Silicon Thin-Film Transistors | Tahi, Hakim; Djezzar, Boualem; Tahanout, Cherifa Tahanout; Benmessai, Karim |
| 2022 | Detailed total ionizing dose effects on LDMOS transistors | Houadef, Ali; Djezzar, Boualem |
| 2014 | Etude des effets NBTI et PBTI sur la fiabilite des dispositifs MOS | Djezzar, Boualem |
| 2021 | Evaluation of Hot Carrier Impact on Lateral- DMOS with LOCOS feature | Houadef, Ali; Djezzar, Boualem |
| 2017 | Experimental investigation of NBTI degradation in power VDMOS transistors under low magnetic field | Tahi, Hakim; Tahanout, Cherifa; Boubaaya, Mohamed; Djezzar, Boualem; Merah, Sidi Mohammed; Nadji, Bacharia; Saoula, Nadia |
| 2017 | Experimental Investigation of NBTI Degradation in Power VDMOS Transistors Under Low Magnetic Field | TAHI, Hakim; Tahanout, Cherifa; BOUBAAYA, Mohamed; Djezzar, Boualem; Merah, Sidi Mohammed; Nadji, Bacharia; SAOULA, Nadia |
| 2020 | Fast Ids – Vgs technique implementation for NBTI characterization | Dhia Elhak, Messaoud; Zitouni, Abdelkader; Djezzar, Boualem; Benabdelmoumene, Abdelmadjid; Zatout, Boumediene |
| 2023 | Fast methods for studying the effect of electrical stress on SiO2 dielectrics in Metal-Oxide-Semiconductor Field-Effect transistors | Messaoud, Dhia Elhak; Djezzar, Boualem; Boubaaya, Mohamed; Chenouf, Amel; Benabdelmoumene, Abdelmadjid; Zatout, Boumediene; Zitouni, Abdelkader |
| 2020 | HCI degradation of LOCOS-based LDMOS transistor fabricated by 1 μ m CMOS process | Houadef, Ali; Djezzar, Boualem |
| 2014 | Investigation of NBTI degradation on power VDMOS transistors under magnetic field | Tahi, Hakim; Benmessai, Karim; Le Floch, Jean Michel; Boubaaya, Mohamed; Tahanout, Cherifa; Djezzar, Boualem; BENABDELMOMENE, Abdelmadjid; Goudjil, Mohamed; Chenouf, Amel |
| 2023 | Metal-oxide-semiconductor field-effect transistor (MOSFET) pulsed current-voltage characterization technique: design and discussion | Messaoud, Dhia Elhak; Djezzar, Boualem; Boubaaya, Mohamed; Benabdelmoumene, Abdelmadjid; Zatout, Boumediene; Chenouf, Amel; Zitouni, Abdelkader |
| 2021 | NBTI Fast Electrical Characterization in pMOSFET Devices | Dhia Elhak, Messaoud; Djezzar, Boualem; Benabdelmoumene, Abdelmadjid; Boubaaya, Mohamed; Zatout, Boumediene; Zitouni, Abdelkader |
| 2016 | On the Circuit-Level Reliability Degradation Due to AC NBTI Stress | Chenouf, Amel; Djezzar, Boualem; Benabdelmoumene, Abdelmadjid; Tahi, Hakim |
| 2012 | Oxide trap annealing by H2 cracking at e'center under NBTI stress | Tahanout, Cherifa; Nadji, Becharia; Tahi, Hakim; Djezzar, Boualem; Benabdelmoumene, Abdelmadjid; Chenouf, Amel |
| 2021 | Process and performance optimization of Triple-RESURF LDMOS with Trenched-Gate | Houadef, Ali; Djezzar, Boualem |
| 2023 | Single pulse charge pumping technique improvement for interface-states profiling in the channel of MOSFET devices | Messaoud, DhiaElhak; Djezzar, Boualem; Boubaaya, Mohamed; Benabdelmoumene, Abdelmadjid; Zatout, Boumediene; Chenouf, Amel; Zitouni, Abdelkader |
| 2023 | Single Pulse Charge Pumping Technique Improvement for Interface-States Profiling in the Channel of MOSFET Devices | Messaoud, Dhia Elhak; Djezzar, Boualem; Boubaaya, Mohamed; Benabdelmoumene, Abdelmadjid; Zatout, Boumediene; Chenouf, Amel; Zitouni, Abdelkader |
| 2020 | Sizing of the CMOS 6T-SRAM cell for NBTI ageing mitigation | Chenouf, Amel; Djezzar, Boualem; Bentarzi, Hamid; Benabdelmoumene, Abdelmadjid |
Showing results 1 to 19 of 19
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