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| Titre: | Analysis of the gate-to-channel capacitance variation for the tri-gate nanowire junctionless transistors |
| Auteur(s): | Smaani, Billel
Yakhelef, Yassine
Nafa, Fares
Salah, Mouhamed |
| Mots-clés: | Tri-gate junctionless nanowire
Gate-to-channel capacitance
Threshold voltage |
| Date de publication: | 2021 |
| Collection/Numéro: | Conference: GLOBAL CONFERENCE on ENGINEERING RESEARCH Project: Analyse of micro and nanostructures Silicium; |
| Résumé: | In this paper, the gate-to-channel capacitance variation for the tFlat-band voltageri-gate nanowire
junctionless transistor (JLT) has been analyzed. It is based on the 2-D electrostatic numerical
simulation realized using Silvaco-TCAD Software. The flat-band voltage and the threshold
voltage are extracted trough the plotting of the derivative for the gate-to-channel capacitance
versus the gate voltage. This plotting is performed for different values of the channel width and
the channel height of the tri-gate JLT. Moreover, the physical effect of the back-gate biasing has
been investigated |
| URI/URL: | http://dlibrary.univ-boumerdes.dz:8080/handle/123456789/10223 |
| Collection(s) : | Communications Nationales
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