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Titre: | RF performance analysis of conventional and recessed gate AlGaN/GaN MOSHEMT using β–Ga2O3 as dielectric layer |
Auteur(s): | Amina, Noual Zitouni, Messai Touati, Zineeddine |
Mots-clés: | AlGaN/GaN MOSHEMT β–Ga2O3 gate dielectric Recessed gate Maximum oscillation frequency SILVACO TCAD |
Date de publication: | 2023 |
Editeur: | IEEE |
Collection/Numéro: | 2023 International Conference on Advances in Electronics, Control and Communication Systems (ICAECCS); |
Résumé: | In this research paper, a novel heterostructure AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) is proposed, using an ultra-wide bandgap Oxide Gallium(O−2Ga2O3) as dielectric layer growth on GaN substrate. The transfer and RF characteristics of the developed device with a recessed T-gate are compared with a conventional T-gate structure by using a two-dimensional (2D) simulation of the TCAD Silvaco Software at 300 K. A positive value of the threshold voltage V TH of 0.56 V and the highest peak transconductance (Gm,max) of 1.15 S/μm were achieved for 2 nm recess gate depth. A very small sub-threshold slope of 66mV/ dec was reached. The microwave frequency performances of this device showed an outstanding result. The E-mode device exhibited a cut-off frequency (Ft) of 49GHz, and a maximum frequency (Fmax) of 60GHz while the MOSHEMT with conventional gate structure attained to only 38GHz and 47GHz respectively. The simulation results make this improved AlGaN/GaN MOSHEMT using a β–Ga 2 O 3 as a dielectric layer suitable for high-frequency electronic applications |
URI/URL: | https://ieeexplore.ieee.org/abstract/document/10104839 DOI: 10.1109/ICAECCS56710.2023.10104839 http://dlibrary.univ-boumerdes.dz:8080/handle/123456789/11548 |
Collection(s) : | Communications Internationales
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