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Titre: | Numerical study of T-GATE AlGaN/AlInGaN/GaN moshemt with single and double barrier for THZ frequency applications |
Auteur(s): | Noual, Amina Zitouni, Messai Touati, Zine-Eddine Saidani, Okba Yousfi, Abderrahim |
Mots-clés: | AlInGaN Quaternary material Double barrier Maximum THz frequency T-gate; TCAD-Silvaco TiO2-MOSHEMT |
Date de publication: | 2023 |
Editeur: | V. N. Karazin Kharkiv National University |
Collection/Numéro: | East European Journal of Physics/ Vol. 2023, N° 4, 2023;PP. 216 - 225 |
Résumé: | This paper presents a comprehensive investigation into the DC analog and AC microwave performance of a state-of-the-art T-gate double barrier AlGaN/AlInGaN/GaN MOSHEMT (Metal Oxide Semiconductor High Electron Mobility Transistor) implemented on a 4H-SiC substrate. The study involves meticulous numerical simulations and an extensive comparison with a single barrier design, utilizing the TCAD-Silvaco software. The observed disparity in performance can be attributed to the utilization of double barrier technology, which enhances electron confinement and current density by augmenting the polarization-induced charge during high-frequency operations. Remarkably, when compared to the single barrier design, the double barrier MOSHEMT exhibits a notable 15% increase in drain current, a 5% increase in transconductance, and an elevated breakdown voltage (VBR) of 140 V in E-mode operation. Furthermore, the radio frequency analysis of the double barrier device showcases exceptional performance, setting new records with a maximum oscillation frequency (fmax) of 1.148 THz and a gain cutoff frequency (ft) of 891 GHz. These impressive results obtained through deck-simulation affirm the immense potential of the proposed double barrier AlGaN/AlInGaN/GaN MOSHEMT for future applications in high-power and terahertz frequency domains. |
URI/URL: | 10.26565/2312-4334-2023-4-27 http://dlibrary.univ-boumerdes.dz:8080/handle/123456789/12801 https://www.researchgate.net/publication/376199953_Numerical_Study_of_T-Gate_AlGaNAlInGaNGaN_MOSHEMT_with_Single_and_Double_Barrier_for_THz_Frequency_Applications |
ISSN: | 23124334 |
Collection(s) : | Publications Internationales
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