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Titre: | Fast methods for studying the effect of electrical stress on SiO2 dielectrics in Metal-Oxide-Semiconductor Field-Effect transistors |
Auteur(s): | Messaoud, Dhia Elhak Djezzar, Boualem Boubaaya, Mohamed Chenouf, Amel Benabdelmoumene, Abdelmadjid Zatout, Boumediene Zitouni, Abdelkader |
Mots-clés: | Measurement techniques Metaloxide semiconductor field-effect transistor (MOSFETs) Electrical stress SiO2 Dielectrics Oxide semiconductors |
Date de publication: | 2023 |
Editeur: | Pleiades Publishing |
Collection/Numéro: | Instruments and Experimental Techniques / Vol.66, N° 6, 2023;pp. 1095–1105 |
Résumé: | This work implements three fast measurement techniques based on the measure–stress–measure (MSM) method. These techniques, namely, measuring–around–, one–point on–the–fly (OTF), and pulsed current-voltage (PIV), were used to characterize three different technologies of metal–oxide–semiconductor field-effect transistors (MOSFETs) with same gate dielectric silicon–dioxide (SiO2) and various thicknesses = 20 nm, 4 nm, 2.3 nm. Moreover, well–configured electrical stress biasing has been performed to discuss the dielectric degradation of these devices using those characterization techniques. The pros and cons of the used techniques are well discussed based on our results. Furthermore, experimental results showed that threshold voltage shift () follows a power law time dependence with time exponent (n) being 0.16 for molecular hydrogen (H2) diffusing species and 0.25 for hydrogen atoms (H) diffusing species. We have found that the thicker the SiO2 dielectric the more the oxide traps () contribute to the resulting degradation. However, the dependency between SiO2 dielectric thickness and oxide traps could not be necessarily linear. |
URI/URL: | https://doi.org/10.1134/S0020441223060106 http://dlibrary.univ-boumerdes.dz:8080/handle/123456789/12823 https://link.springer.com/article/10.1134/S0020441223060106 |
ISSN: | 0020-4412 |
Collection(s) : | Publications Internationales
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