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Veuillez utiliser cette adresse pour citer ce document : http://dlibrary.univ-boumerdes.dz:8080/handle/123456789/14176

Titre: Single pulse charge pumping technique improvement for interface-states profiling in the channel of MOSFET devices
Auteur(s): Messaoud, DhiaElhak
Djezzar, Boualem
Boubaaya, Mohamed
Benabdelmoumene, Abdelmadjid
Zatout, Boumediene
Chenouf, Amel
Zitouni, Abdelkader
Mots-clés: Interface states
Semiconductor device measurement
Degradation
MOSFET
Hot carrier injection
Date de publication: 2023
Editeur: IEEE Transactions on Electron Devices
Collection/Numéro: IEEE Transactions on Device and Materials Reliability/ Vol.23, N°3;
Résumé: This paper presents the separated single pulse charge pumping (SSPCP) technique, an improvement over conventional single pulse charge pumping (CSPCP) for analyzing metal oxide semiconductor field-effect transistor (MOSFET) degradation. SSPCP separates the measurement of source and drain currents (Is and Id ), enabling the localization of interface traps (Nit) near these regions. Experimental validation shows that SSPCP achieves comparable results to CSPCP with a maximum measurement error of 5%. The technique is particularly useful for studying stress-induced localized degradation profiling, allowing for the exploration of non-uniform stress (e.g., hot-carrier injection) and uniform stress (e.g., negative bias temperature instability) in transistors with short channels. SSPCP effectively analyzes localized degradation and identifies differences in stress-induced degradation between the source and drain regions, making it a valuable tool in semiconductor device characterization.
URI/URL: DOI: 10.1109/TDMR.2023.3315931
http://dlibrary.univ-boumerdes.dz:8080/handle/123456789/14176
Collection(s) :Publications Internationales

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