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Titre: | Single pulse charge pumping technique improvement for interface-states profiling in the channel of MOSFET devices |
Auteur(s): | Messaoud, DhiaElhak Djezzar, Boualem Boubaaya, Mohamed Benabdelmoumene, Abdelmadjid Zatout, Boumediene Chenouf, Amel Zitouni, Abdelkader |
Mots-clés: | Interface states Semiconductor device measurement Degradation MOSFET Hot carrier injection |
Date de publication: | 2023 |
Editeur: | IEEE Transactions on Electron Devices |
Collection/Numéro: | IEEE Transactions on Device and Materials Reliability/ Vol.23, N°3; |
Résumé: | This paper presents the separated single pulse charge pumping (SSPCP) technique, an improvement over conventional single pulse charge pumping (CSPCP) for analyzing metal oxide semiconductor field-effect transistor (MOSFET) degradation. SSPCP separates the measurement of source and drain currents (Is and Id ), enabling the localization of interface traps (Nit) near these regions. Experimental validation shows that SSPCP achieves comparable results to CSPCP with a maximum measurement error of 5%. The technique is particularly useful for studying stress-induced localized degradation profiling, allowing for the exploration of non-uniform stress (e.g., hot-carrier injection) and uniform stress (e.g., negative bias temperature instability) in transistors with short channels. SSPCP effectively analyzes localized degradation and identifies differences in stress-induced degradation between the source and drain regions, making it a valuable tool in semiconductor device characterization. |
URI/URL: | DOI: 10.1109/TDMR.2023.3315931 http://dlibrary.univ-boumerdes.dz:8080/handle/123456789/14176 |
Collection(s) : | Publications Internationales
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