Charge-extraction technique for studying the surface-states in MOS devices

Please use this identifier to cite or link to this item: http://dlibrary.univ-boumerdes.dz:8080/handle/123456789/1466

Titre:	Charge-extraction technique for studying the surface-states in MOS devices
Auteur(s):	Bouderbala, Rachid
Mots-clés:	MOS (électronique) Metal oxide semiconductors
Issue Date:	1992
Description:	198 p. : ill. ; 30 cm
URI:	http://dlibrary.univ-boumerdes.dz:8080123456789/1466
Appears in Collections:	Magister

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Bouderbala Rachid magister.pdf		5,06 MB	Adobe PDF	View/Open