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| Titre: | A semi numerical approach for semiconductor devices physical modeling |
| Auteur(s): | Dehmas, Mokrane
Azrar, A.
Recioui, Abdelmadjid
Challal, Mouloud |
| Mots-clés: | Deep depletion
Mathematical extensions
Numerical approaches
Physical modeling
Poisson's equation
Potential profiles
Semi-analytical methods
Voltage distribution
Models
MOS capacitors
Poisson distribution
Semiconductor device manufacture
Semiconductor switches
Semiconductor device structures |
| Issue Date: | 2009 |
| Editeur: | IEEE |
| Référence bibliographique: | 2009 International Conference on Advances in Computational Tools for Engineering Applications, ACTEA 2009; Beirut; Lebanon; 15 July 2009 through 17 July 2009; Category numberCFP0945G; Code 78008 |
| Collection/Numéro: | 2009 International Conference on Advances in Computational Tools for Engineering Applications, ACTEA 2009 2009, Article number 5227928;pp.146-150 |
| Résumé: | In this work, the developed mathematical extension of the semi analytical Method of Lines (MoL) for the solution of Poisson's equation which governs the voltage distribution within semiconductor devices is adapted to fit realistic considerations related to the geometry and the electrodes configuration of such structures. The obtained tool is then applied to find the potential profile within a MOS capacitor in deep depletion mode |
| URI: | http://dlibrary.univ-boumerdes.dz:8080123456789/2101 |
| ISBN: | 978-142443834-1 |
| Appears in Collections: | Communications Internationales
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