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Titre: | A semi numerical approach for semiconductor devices physical modeling |
Auteur(s): | Dehmas, Mokrane Azrar, A. Recioui, Abdelmadjid Challal, Mouloud |
Mots-clés: | Deep depletion Mathematical extensions Numerical approaches Physical modeling Poisson's equation Potential profiles Semi-analytical methods Voltage distribution Models MOS capacitors Poisson distribution Semiconductor device manufacture Semiconductor switches Semiconductor device structures |
Issue Date: | 2009 |
Editeur: | IEEE |
Référence bibliographique: | 2009 International Conference on Advances in Computational Tools for Engineering Applications, ACTEA 2009; Beirut; Lebanon; 15 July 2009 through 17 July 2009; Category numberCFP0945G; Code 78008 |
Collection/Numéro: | 2009 International Conference on Advances in Computational Tools for Engineering Applications, ACTEA 2009 2009, Article number 5227928;pp.146-150 |
Résumé: | In this work, the developed mathematical extension of the semi analytical Method of Lines (MoL) for the solution of Poisson's equation which governs the voltage distribution within semiconductor devices is adapted to fit realistic considerations related to the geometry and the electrodes configuration of such structures. The obtained tool is then applied to find the potential profile within a MOS capacitor in deep depletion mode |
URI: | http://dlibrary.univ-boumerdes.dz:8080123456789/2101 |
ISBN: | 978-142443834-1 |
Appears in Collections: | Communications Internationales
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