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Titre: | Simple and fast simulation approach to investigate the NBTI effect on suspended gate MOS devices |
Auteur(s): | Tahanout, Cherifa Tahi, Hakim Bouchera, Nadji Hocini, Lotfi |
Mots-clés: | MEMS NBTI degradation N-type SG-MOS devices |
Date de publication: | 2019 |
Collection/Numéro: | International Journal of Electronics Letters Volume 8, 2020 - Issue 4;p.p. 355-369 |
Résumé: | In this paper, we investigate the negative bias temperature instability(NBTI) on conventional P-type metal-oxide-semiconductorfield effecttransistors (PMOSFET) using on-fly bulk trap technique (OTFBT). Theextracted NBTI induced interface (ΔNit)andoxidetraps(ΔNot), usingOTFBT, are modelled and used to simulate the NBTI effect on N-typesuspended gate metal-oxide-semiconductor devices (N-type SG-MOS),which could be manufactured by thesamefabricationprocessasconventional PMOSFET. The used approach to simulate the NBTI effectis performed by combining, in the same simulation program, theN-type SG-MOS devices model with the NBTI inducedΔNitandΔNotmodels. This approach allowed us to simulate and predict rapidly thelifetime of the N-type SG-MOS devices subjected to the NBTI degrada-tion. The simulation shows that the degradation of N-type SG-MOSdevices due to the NBTI is the same as that of conventional PMOSFET.However, the extracted lifetime of N-type SG-MOS devices (stiction ofthe suspended gate) is longer than that of conventional PMOSFET. |
URI/URL: | https://www.tandfonline.com/doi/full/10.1080/21681724.2019.1625961 http://dlibrary.univ-boumerdes.dz:8080/handle/123456789/6191 |
ISSN: | 2168-1724 |
Collection(s) : | Publications Internationales
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