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Titre: | Physical properties of the delafossite CuCoO2 synthesized by co-precipitation /hydrothermal route |
Auteur(s): | Bouakaz, H. Abbas, Moussa Brahimi, R. Trari, M. |
Mots-clés: | Delafossite CuCoO2 Hydrothermal route Semiconductor Oxygen insertion Photo-electrochemical Electrochemical impedance spectroscopy |
Date de publication: | 2021 |
Editeur: | Elsevier |
Collection/Numéro: | Materials Science in Semiconductor Processing/ Vol.136 (2021); |
Résumé: | CuCoO2 crystallizing in the delafossite structure was prepared by co-precipitation/hydrothermal method at low temperature (~ 150 °C). It is stable in air up to ~400 °C beyond which it turns into the spinel. The oxide has a direct optical transition attributed to the crystal field splitting of Cu+, linearly coordinated. It exhibits p-type behavior due to O2− insertion in the layered lattice. Such property is corroborated by a cathodic photocurrent in the intensity-potential (J – E) plot and a negative slope of the capacitance potential (C−2– E) plot. The latter traced in NaOH (0.01 M) electrolyte, exhibits a straight line from which a flat band potential of +0.411 V and a hole density of 6.9 × 1023 m−3 were extracted. An exchange current density of 7.36 μA cm−2and a polarizarion resistance (6.69 kΩ cm2), derived from the semi-logarithmic curve (log(J) – E), indicate a good electrochemical stability with a medium hysteresis loop and a low H2-over potential. The anisotropy of the 2 D dimensional crystal structure allows reversible oxygen insertion in the (0 0 n) planes evidenced from the (J – E) profiles. The Electrochemical Impedance Spectroscopy (EIS) measurements give two well-distinguished depressive semicircles in the dark. The diameter of the semicircle at high frequencies (1.49 kΩ cm2) decreases down to (1.28 kΩ cm2) under irradiation, a behavior typical of a non-degenerate semi conductivity of CuCoO2 |
URI/URL: | https://doi.org/10.1016/j.mssp.2021.106132 https://www.sciencedirect.com/science/article/abs/pii/S136980012100473X http://dlibrary.univ-boumerdes.dz:8080/handle/123456789/7119 |
ISSN: | 13698001 |
Collection(s) : | Publications Internationales
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