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Veuillez utiliser cette adresse pour citer ce document : http://dlibrary.univ-boumerdes.dz:8080/handle/123456789/11547

Titre: Efficiency comparison of silicon and silicon carbide MOSFETs in a PV system application
Auteur(s): Bouchetob, Elaid
Nadji, Bouchra
Mahdi, Ismahan
Mots-clés: PV system
SiC Mosfet
Si Mosfet
DC-DC converter
MPPT
Co-Simulation
Date de publication: 2023
Editeur: IEEE
Collection/Numéro: 2023 International Conference on Advances in Electronics, Control and Communication Systems (ICAECCS);
Résumé: This research includes a comparative assessment of the efficiency of DC-DC converters in a PV system that are based on silicon and silicon carbide Mosfets. The inquiry compares the two types of MOSFETs. The maximum power point tracking (MPPT) method is used to control the DC-DC converter, which receives electricity from a solar array with a 1 kW capacity. Along with being employed for the MPPT genetic algorithms, Matlab Simulink was used throughout the entire development of the solar array. After completing this stage, the next step involves using Ansys Simplorer to do a simulation of the MOSFETs. The last phase, which consisted of creating a Co-Simulation between Matlab/Simulink and Ansys Simplorer, has now been completed. In order to improve the efficiency of the system as a whole, we are able to switch out the Si Mosfets that are now being used in the PV application for SiC Mosfets. This is feasible because of the superior performance of SiC MOSFETs in terms of both response speed and the amount of energy lost in the process
URI/URL: https://ieeexplore.ieee.org/abstract/document/10104789
DOI: 10.1109/ICAECCS56710.2023.10104789
http://dlibrary.univ-boumerdes.dz:8080/handle/123456789/11547
Collection(s) :Communications Internationales

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