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Titre: | RF Performance Analysis of Conventional and Recessed Gate AlGaN/GaN MOSHEMT using β–Ga 2 O 3 as Dielectric Layer |
Auteur(s): | Noual, Amina Messai, Zitouni Touati, Zineeddine |
Mots-clés: | AlGaN/GaN MOSHEMT β-Ga2O3 gate dielectric Recessed gate Maximum oscillation frequency SILVACO TCAD |
Date de publication: | 2023 |
Collection/Numéro: | Conference: 2023 International Conference on Advances in Electronics, Control and Communication Systems (ICAECCS) Authors: Noual Amina University M'Hamed Bougara of Boumerdes Z. Messaï University Mohamed El Bachir El Ibrahimi Bordj Bou Arreridj Algiers University Touati Zineeddine Université Mohamed El Bachir El Ibrahimi de Bordj Bou Arréridj; |
Résumé: | Abstract—In this research paper, a novel heterostructure AlGaN/GaN metal-oxide-semiconductor high electron mobility
transistor (MOSHEMT) is proposed, using an ultra-wide
bandgap Oxide Gallium (β-Ga2O3) as dielectric layer growth on
GaN substrate. The transfer and RF characteristics of the
developed device with a recessed T-gate are compared with a
conventional T-gate structure by using a two-dimensional (2D)
simulation of the TCAD Silvaco Software at 300 K. A positive
value of the threshold voltage VTH of 0.56 V and the highest peak
transconductance (Gm, max) of 1.15 S/μm were achieved for 2 nm
recess gate depth. A very small sub-threshold slope of 66mV/dec was reached. The microwave frequency performances of this device showed an outstanding result. The E-mode device exhibited a cut-off frequency (Ft) of 49 GHz, and a maximum
frequency (Fmax) of 60 GHz while the MOSHEMT with
conventional gate structure attained to only 38 GHz and 47 GHz
respectively. The simulation results make this improved AlGaN/GaN MOSHEMT using a β-Ga2O3 as a dielectric layer suitable for high-frequency electronic applications. |
URI/URL: | DOI:10.1109/ICAECCS56710.2023.10104839 http://dlibrary.univ-boumerdes.dz:8080/handle/123456789/14210 |
Collection(s) : | Communications Internationales
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