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Titre: Fast and simple method for estimation and separation of radiation-induced traps in MOSFETs devices
Auteur(s): Nadji, B.
Tahi, H.
Djezzar, B.
Mots-clés: Border traps
Charge Pumping
Classical methods
Current voltage
Energy bandgaps
P and N-MOS transistors
radiation-induced traps
Energy bandgaps
Estimation errors
Experimental data
Fast methods
MOSFETs
Radiation-induced
Saw-tooth signals
SIMPLE method
Voltage shift
Transistor transistor logic circuits
Electromagnetic induction
Date de publication: 2011
Editeur: IEEE
Référence bibliographique: IEEE International Conference on Quality and Reliability, ICQR 2011; Bangkok; Thailand; 14 September 2011 through 17 September 2011; Category numberCFP1123P-ART; Code 86978
Collection/Numéro: IEEE International Conference on Quality and Reliability, ICQR 2011 2011, Article number 6031763;pp. 469-472
Résumé: In this work, we propose a simple and fast method to estimate the radiation-induced traps in P and N-MOS transistors independently. This method is based on standard current-voltage and Charge Pumping (I(V)-CP) to separate the radiation-induced border-traps (N bt) and true interface-traps (N it), where the radiation-induced oxide-traps (N ot) are extracted classically by measuring the threshold voltage (V th) or Mid-Gap (V mg) voltage shift. The charge pumping (CP) curves are measured using the rise and fall saw-tooth signal for N-and P-MOS transistors respectively, to minimize the border-trap estimation error caused by the difference in the energy band gap scanned by standard I(V) and CP techniques. Emphasis is made on critical comparison between the radiation induced N bt extracted using I(V)-CP and classical method such as OTCP and DTBT. According to experimental data, the I(V)-CP method is more accurate than OTCP and DTBT methods, since it is more sensitive than OTCP method for the extraction of border traps and it can gives all kinds of traps for P and N-MOS transistors separately
URI/URL: http://dlibrary.univ-boumerdes.dz:8080123456789/1704
ISBN: 978-145770628-8
Collection(s) :Communications Internationales

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