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Titre: | Theoretical Study and Simulations of an InGaN Dual-Junction Solar Cell |
Auteur(s): | Mesrane, Abdelfettah Mahrane, A. Rahmoune, F. Oulebsir, A. |
Mots-clés: | Band gap combination Dual-junction solar cell InGaN Current match Efficiency |
Date de publication: | 2016 |
Editeur: | Springer link |
Collection/Numéro: | Journal of Electronic Materials;PP. 1–8 |
Résumé: | This study aims to determine the optimal configuration of the dual-junction InGaN solar cell. Several parameters of the dual-InGaN-junction solar cell have been investigated as the band gap combination and the thicknesses of the layers. Physical models and the optical properties of the InxGa1−xN according to the indium content have been used. The dual-junction solar cell has been designed and simulated for each chosen band gap combination. The current densities drawn from the sub-cells were matched by adjusting their emitter layers thicknesses. The best conversion efficiency obtained for the optimized dual-junction In0.49Ga0.51N/In0.74Ga0.26N solar cell, under standard conditions, was 34.93% which corresponds to the band gap combination of 1.73 eV/1.13 eV. The short-circuit current density and the open circuit voltage obtained from the tandem cell In0.49Ga0.51N/In0.74Ga0.26N are respectively, 21.3941 mA/cm2 and 1.9144 V. The current mismatch was 0.057%. The effects of the front and back layers thicknesses of the top and bottom cells on the efficiency were also studied. Furthermore, the electrical characteristics of the dual-junction solar cell and its sub-cells were also discussed |
URI/URL: | http://dlibrary.univ-boumerdes.dz:8080/handle/123456789/3179 |
ISSN: | 0361-5235 |
Collection(s) : | Publications Internationales
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