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Titre: Theoretical Study and Simulations of an InGaN Dual-Junction Solar Cell
Auteur(s): Mesrane, Abdelfettah
Mahrane, A.
Rahmoune, F.
Oulebsir, A.
Mots-clés: Band gap combination
Dual-junction solar cell
InGaN
Current match
Efficiency
Date de publication: 2016
Editeur: Springer link
Collection/Numéro: Journal of Electronic Materials;PP. 1–8
Résumé: This study aims to determine the optimal configuration of the dual-junction InGaN solar cell. Several parameters of the dual-InGaN-junction solar cell have been investigated as the band gap combination and the thicknesses of the layers. Physical models and the optical properties of the InxGa1−xN according to the indium content have been used. The dual-junction solar cell has been designed and simulated for each chosen band gap combination. The current densities drawn from the sub-cells were matched by adjusting their emitter layers thicknesses. The best conversion efficiency obtained for the optimized dual-junction In0.49Ga0.51N/In0.74Ga0.26N solar cell, under standard conditions, was 34.93% which corresponds to the band gap combination of 1.73 eV/1.13 eV. The short-circuit current density and the open circuit voltage obtained from the tandem cell In0.49Ga0.51N/In0.74Ga0.26N are respectively, 21.3941 mA/cm2 and 1.9144 V. The current mismatch was 0.057%. The effects of the front and back layers thicknesses of the top and bottom cells on the efficiency were also studied. Furthermore, the electrical characteristics of the dual-junction solar cell and its sub-cells were also discussed
URI/URL: http://dlibrary.univ-boumerdes.dz:8080/handle/123456789/3179
ISSN: 0361-5235
Collection(s) :Publications Internationales

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