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| Titre: | Investigation and study of the electrical characteristics of anodic oxide films SiO2 annealed at various temperatures |
| Auteur(s): | Nadji, Bécharia |
| Mots-clés: | Fowler–Nordheim conduction
MOS capacitors
Interface states density,
Electrical characterisation
Pure water
Annealing oxidation |
| Date de publication: | 2007 |
| Editeur: | Elsevier |
| Collection/Numéro: | Journal of materials processing technology/ Vol.181, N°1–3 (2007);pp. 230–234 |
| Résumé: | The anodic silica films were produced by anodization of monocrystalline silicon wafers in pure water in an electrolysis cell (P.T.F.E), with a constant current density of 20 μA/cm2. All anodizations are performed at room temperature. During oxidation film thickness increases linearly as a function of total charge. Films were annealed under nitrogen atmosphere at various temperatures (600, 800 and 1050 °C). MOS capacitors with anodic oxides were elaborated. This study deals to the determination of interface states density Si/SiO2 and the study of electronic conduction. Using static, quasi-static, C(V), G(ω) measurements, we have determined the interface states density, fixed charges density for annealed oxides at various temperatures. The conduction mechanism was determined with I(V) measurements |
| URI/URL: | http://dlibrary.univ-boumerdes.dz:8080/handle/123456789/414 |
| ISSN: | 0924-0136 |
| Collection(s) : | Publications Internationales
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