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Titre: N+ silicon solar cells emitters realized using phosphoric acid as doping source in a spray process
Auteur(s): Bouhafs, D.
Moussi, A.
Boumaour, M.
Abaidia, Seddik-El-Hak
Mahiou, L.
Mots-clés: Solar cells
Silicon
Phosphorous
Spray deposition
Date de publication: 2006
Collection/Numéro: Thin Solid Films/ Vol.510, N°1-2 (2006);pp. 325-328
Résumé: The spray technique is used to realize the n+ emitter from phosphoric acid H3PO4 as a doping source. Emulsions have been prepared using several organic solvents. It was found that H3PO4:2-butanol mixture provides the most uniform deposited layer. The sheet resistance and the n+ profile were measured with a four point probe and the Hall profiling, respectively. The variety of emitters obtained are characterized by a sheet resistance ranging from 10 to 86 Ω/□ and a junction depth of about 0.2 to 0.7 μm which can be adequate for emitters in a polycrystalline silicon solar cell process
URI/URL: http://dlibrary.univ-boumerdes.dz:8080/handle/123456789/466
Collection(s) :Publications Internationales

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