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Titre: | Partial replacement in CISe solar cells of the molybdenum layer by an epitaxial Titanium Nitride thin film deposited onto MgO substrate |
Auteur(s): | Messaid, Bachir Eddine Le Paven, Claire Tala-Ighil, Razika Marlec, Florent Benzerga, Ratiba |
Mots-clés: | Solar cells Rear contact MgO substrate Epitaxial TiN |
Issue Date: | 2018 |
Editeur: | IOP Publiching |
Collection/Numéro: | Mater. Res. Express 5(2018) 106408; |
Résumé: | Currently, Molybdenum represents the best rear contact used in thin film Solar Cells, based on
chalcopyrites Cu(In,Ga)(S,Se)2 or CZTS for instance. However, its high price increases the solar cell
cost and comes against the generalization of the photovoltaic energy. In order to overcome this fact, it
is proposed in this work to replace partially Molybdenum by Titanium Nitride (TiN) in CuInSe2 Solar
Cells. The TiN layers were deposited by radiofrequency magnetron sputtering with substrate
temperature fixed at 25°C, 500°C or 700°C, for two RF powers (150W, 200W). It is found that the
sample deposited at 700°C shows the optimal stoichiometry (Ti/N=0.95), with a good crystallinity,
a texturation along the(h00) planes and an epitaxial growth confirmed by phi-scans. The introduction
of TiN in the rear contact requires the deposition of a thin Titanium layer as a buffer layer to improve
the adherence of the TiN film. After analyzing the TiN/Ti/MgO structure, it is found that the Ti
intermediate layer doesn’t affect the TiN crystalline orientation, the stoichiometry remains close to 1
(Ti/N=0.94) in addition with a homogenous morphological surface |
URI: | http://dlibrary.univ-boumerdes.dz:8080/handle/123456789/5449 |
ISSN: | 2053-1591 |
Appears in Collections: | Publications Internationales
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