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| Titre: | Charge Pumping,GeometricComponent and Degradation ParametersExtraction in MOSFETDevices |
| Auteur(s): | Tahi, Hakim
Tahanout, Cherifa
Djezzar, Boualem Djezzar
Boubaaya, Mohamed
Abdelmadjid, Benabdelmoumene
Chenouf, Amel |
| Mots-clés: | Charge pumping (CP)
Geometric current (IGeo)
Mobility degradation
NBTI |
| Date de publication: | 2015 |
| Editeur: | IEEE |
| Collection/Numéro: | IEEE Transactions on Device and Materials Reliability ( Volume: 15, Issue: 4, Dec. 2015);p.p. 567 - 575 |
| Résumé: | In this paper, we model the geometric component of charge pumping technique (CP). Base on this proposed model, wehave established ananalyticequation for charge pumping current. This equation seems to be an universal one since it is in agreement with CP experimental data of different technologies devices.Instead the classical considerations regarding a parasitic nature of the geometric component, we have demonstrated, in this work, that it can be used to estimate the negative bias temperature (NBTI)induced mobility degradationusing the charge pumping basedmethods such as on-the-fly interface trap (OTFIT). |
| URI/URL: | https://ieeexplore.ieee.org/document/7293187
http://dlibrary.univ-boumerdes.dz:8080/handle/123456789/6186 |
| Collection(s) : | Publications Internationales
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