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| Titre: | Experimental Investigation of NBTI Degradation in Power VDMOS Transistors Under Low Magnetic Field |
| Auteur(s): | TAHI, Hakim
Tahanout, Cherifa
BOUBAAYA, Mohamed
Djezzar, Boualem
Merah, Sidi Mohammed
Nadji, Bacharia
SAOULA, Nadia |
| Mots-clés: | NBTI degradation
Paramagnetic defects
Low magnetic field |
| Date de publication: | 2017 |
| Editeur: | IEEE Transactions on Device and Materials Reliability ( Volume: 17, Issue: 1, March 2017) |
| Collection/Numéro: | IEEE Transactions on Device and Materials Reliability ( Volume: 17, Issue: 1, March 2017);p.p. 99 - 105 |
| Résumé: | In this paper, we report an experimental evidence of the impact of applied a low magnetic field (B <; 10 mT) during negative bias temperature instability (NBTI) stress and recovery, on commercial power double diffused MOS transistor. We show that both interface (ANit) and oxide trap (ANot) induced by NBTI stress are reduced by applying the magnetic field. This reducing is more pronounced as the magnetic field is high. However, the dynamic of interface trap during stress and recovery phase is not affected by the applied magnetic field. While, the dynamic of oxide trap is affected in both stress and recovery phases. |
| URI/URL: | https://ieeexplore.ieee.org/document/7847316
http://dlibrary.univ-boumerdes.dz:8080/handle/123456789/6187 |
| Collection(s) : | Publications Internationales
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