|
Depot Institutionnel de l'UMBB >
Publications Scientifiques >
Communications Internationales >
Veuillez utiliser cette adresse pour citer ce document :
http://dlibrary.univ-boumerdes.dz:8080/handle/123456789/6188
|
| Titre: | Investigation of NBTI degradation on power VDMOS transistors under magnetic field |
| Auteur(s): | Tahi, Hakim
Benmessai, Karim
Le Floch, Jean Michel
Boubaaya, Mohamed
Tahanout, Cherifa
Djezzar, Boualem
BENABDELMOMENE, Abdelmadjid
Goudjil, Mohamed
Chenouf, Amel |
| Mots-clés: | under magnetic field
NBTI degradation
power VDMOS |
| Date de publication: | 2014 |
| Editeur: | IEEE |
| Résumé: | In this paper, we report an experimental evidence of the impact of applied a low magnetic field (B<;100 Gauss) during negative bias temperature instability (NBTI) stress and recovery, on commercial power double diffused MOS transistor (VDMOS). We show that both interface (ΔN it ) and oxide trap (ΔN ot ) induced by NBTI stress decrease by applied magnetic field. This decrease is more pronounced as the magnetic field is high. In addition, the recovery of NBTI induced threshold voltage shift (ΔV th ) is relatively important with applied magnetic field. |
| URI/URL: | https://ieeexplore.ieee.org/document/7049530
http://dlibrary.univ-boumerdes.dz:8080/handle/123456789/6188 |
| Collection(s) : | Communications Internationales
|
Fichier(s) constituant ce document :
|
Tous les documents dans DSpace sont protégés par copyright, avec tous droits réservés.
|
