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| Titre: | Fast Ids – Vgs technique implementation for NBTI characterization |
| Auteur(s): | Dhia Elhak, Messaoud
Zitouni, Abdelkader
Djezzar, Boualem
Benabdelmoumene, Abdelmadjid
Zatout, Boumediene |
| Mots-clés: | MOSFET reliability
Fast characterization
Extraction methods |
| Date de publication: | 2020 |
| Editeur: | IEEE |
| Collection/Numéro: | 2020 International Conference on Electrical Engineering (ICEE);pp. 1-6 |
| Résumé: | In this paper, we implemented the fast I ds - V gs technique to get the entire characteristic of p-MOSFET devices; as fast as possible. This technique is used within MSM protocol under NBTI conditions. We reached 10μs in measurement time; a stress-measure delay (switching time) of about a hundred of milliseconds was reached. However, strengths and weaknesses of the technique have been discussed. Furthermore, Transconductance (g m ), subthreshold slope (SS) and mid-gap (MG) methods have also been implemented and discussed. NBTI parameter i.e. ΔV th , n, y and E a are extracted and compared to other results. A time exponent n of 0.149 has been touched. Activation energy E a = 0.039 eV and a field factor y = 0.41 MV. cm -1 for a stress time t s <; 10s have been obtained |
| URI/URL: | http://dlibrary.univ-boumerdes.dz:8080/handle/123456789/6517 |
| Collection(s) : | Communications Internationales
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