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Titre: Synthesis of nisi nanocrystals from ni films on si(111) substrates by low-temperature microwave annealing
Auteur(s): Benlatreche, Mohamed Salah
Boukhemis, O.
Smaili, K.
Bouaoina, B.
Mots-clés: Microwave annealing
Nanocrystals
Nickel silicides
Physical vapor deposition
Date de publication: 2017
Editeur: Inst Materials Physics
Collection/Numéro: Digest Journal of Nanomaterials and Biostructures Volume 12, Issue 3, July-September 2017;pp.759-763
Résumé: In this paper, we describe the formation of nickel silicide nanocrystals by physical vapor deposition of nickel on a Si(111) substrate and subsequent silicidation by microwave annealing at temperatures ranging from 250 to 350 °C. The thin films of Ni were deposited on Si(111) wafers at a pressure of 2 x 10-4 mbar. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) investigations revealed that the as-prepared NiSi nanocrystals are almost spherical with sizes in the range of 35 to 155 nm. The XRD patterns reveal the formation of NiSi and the presence of NiO. The chemical composition of the structure was determined by SEM with energy dispersive X-ray spectroscopy.
URI/URL: http://dlibrary.univ-boumerdes.dz:8080/handle/123456789/6740
ISSN: 18423582
Collection(s) :Publications Internationales

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