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| Titre: | NBTI Fast Electrical Characterization in pMOSFET Devices |
| Auteur(s): | Dhia Elhak, Messaoud
Djezzar, Boualem
Benabdelmoumene, Abdelmadjid
Boubaaya, Mohamed
Zatout, Boumediene
Zitouni, Abdelkader |
| Mots-clés: | MOSFET reliability
NBTI
I_ds-V_gs fast characterization
MSM method
Extraction methods |
| Date de publication: | 2021 |
| Editeur: | Université M'hamed Bougara de Boumerdès : Laboratory of Signals and Systems |
| Collection/Numéro: | https://ajss.dz/index.php/ajss/index/ Vol. 6, n° 1(2021); |
| Résumé: | To measure the entire characteristic of p-MOSFET, we have implemented the fast Ids-Vgs technique. The latter is used to study NBTI phenomenon with measure-stress-measure method, for electric field 5MV/cm < Eox < 7.5MV/cm, and temperatures 27°C < Ts < 120°C. Measurement time has reached 10 us, and a stress-measure delay (switching time) of about a hundred of milliseconds was obtained. However, strengths and weaknesses of the implemented technique have been discussed. Furthermore, the extraction methods: transconductance (Gm), subthreshold slope (SS), and mid-gap (MG), have been implemented and discussed as well. NBTI parameter i.e. Delta Vth, n, gamma and Ea were extracted and compared to other results. A time exponent n of 0.149 has been touched. Activation energy Ea = 0.039 eV and a field factor gamma = 0.41 MV/cm for a stress time ts < 10 s have been obtained. |
| URI/URL: | DOI: https://doi.org/10.51485/ajss.v6i1.3
http://dlibrary.univ-boumerdes.dz:8080/handle/123456789/7156 |
| ISSN: | 2543-3792 |
| Collection(s) : | Publications Nationales
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